JMnic
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SA885
・Low
collector saturation
APPLICATIONS
・For
medium output power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
2SC1846
・
Absolute Maximun Ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
CONDITIONS
Open emitter
Open base
Open collector
VALUE
45
35
5
1
1.5
1.2*
1
P
C
Collector power dissipation
T
C
=25℃
5*
T
j
T
stg
Junction temperature
Storage temperature
2
UNIT
V
V
V
A
A
W
150
-55~150
℃
℃
Note) *1: Without heat sink
*2: With a 100
×
100
×
2 mm A1 heat sink
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
