JMnic
Product Specification
Silicon NPN Power Transistors
2SC2258
DESCRIPTION
・With
TO-126 package
・High
transition frequency f
T
・High
collector-emitter voltage V
CEO
APPLICATIONS
・For
high breakdown voltage general
amplification
・For
video output amplification
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector- emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
CONDITIONS
Open emitter
Open base
Open collector
VALUE
250
250
7
0.1
0.15
1.2*
1
P
C
Collector power dissipation
T
C
=25℃
4*
T
j
T
stg
Junction temperature
Storage temperature
2
UNIT
V
V
V
A
A
W
150
-55�½�+150
℃
℃
Note :*1: Without heat sink
*2: With a 100
×
100
×
2 mm A1 heat sink