Product Specification
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Silicon Power Transistors
2SC2246
DESCRIPTION
・High
voltage ,high speed
・With
TO-3 package
APPLICATIONS
・Power
switching
・
Power amplification
・
power driver
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
mb
=25℃
CONDITIONS
Open emitter
Open base
Open collector
MAX
450
400
5
15
30
6
100
200
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance from junction to mounting base
VALUE
1.0
UNIT
℃/W
JMnic