JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
ob
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=1mA; R
BE
=∞
I
C
=10μA; I
E
=0
I
E
=10μA ; I
C
=0
I
C
=500mA; I
B
=50mA
I
C
=500mA; I
B
=50mA
V
CB
=120V; I
E
=0
V
EB
=4V; I
C
=0
I
C
=100mA ; V
CE
=5V
I
C
=10mA ; V
CE
=5V
I
C
=50mA ; V
CE
=10V
I
E
=0 ; V
CB
=10V;f=1MHz
100
90
MIN
2SC3117
TYP.
160
180
6
0.13
0.85
MAX
UNIT
V
V
V
0.45
1.2
1.0
1.0
400
V
V
μA
μA
120
22
MHz
pF
h
FE-1
Classifications
R
100-200
S
140-280
T
200-400
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
