Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220C package
・High
breakdown voltage:
V
CBO
=900V(Min)
・Fast
switching speed.
・Wide
ASO (Safe Operating Area)
APPLICATIONS
・800V/1.5A
switching regulator applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC3149
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
900
800
7
1.5
5
0.8
40
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃