JMnic
Product Specification
Silicon NPN Power Transistors
2SC3212 2SC3212A
DESCRIPTION
・With
TO-3PFa package
・Low
collector saturation voltage
・High
V
CBO
・High
speed switching
APPLICATIONS
・For
high speed switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2SC3212
V
CBO
Collector-base voltage
2SC3212A
V
CEO
V
EBO
I
C
I
CM
I
B
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
3
150
-55~150
℃
℃
Open base
Open collector
Open emitter
900
500
8
7
15
4
100
W
V
V
A
A
A
CONDITIONS
VALUE
800
V
UNIT
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
