JMnic
Product Specification
Silicon NPN Power Transistors
2SC3507
DESCRIPTION
・With
TO-3PFa package
・High-speed
switching
・High
collector-base voltage V
CBO
・Satisfactory
linearity of forward
current transfer ratio h
FE
APPLICATIONS
・For
high-speed switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
3
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1000
800
7
5
10
3
80
W
UNIT
V
V
V
A
A
A