Product Specification
www.jmnic.com
Silicon NPN Power Transistors
ESCRIPTION
・High
breakdown voltage
・High
reliability (adoption of HVP process).
・Fast
speed
・Adoption
of MBIT process.
・With
TO-3PN package
APPLICATIONS
・Ultrahigh-definition
color display horizontal
deflection output.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC3686
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-pulse
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
800
6
7
16
120
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
