JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CES
I
EBO
h
FE
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=100mA ; I
B
=0
I
C
=7A ;I
B
=1.4A
I
C
=7A ;I
B
=1.4A
V
CB
=500V; I
E
=0
V
CE
=900V; R
BE
=0
V
EB
=5V; I
C
=0
I
C
=1.4A ; V
CE
=5V
8
MIN
500
2SC3638
TYP.
MAX
UNIT
V
2.0
1.5
10
0.5
1.0
V
V
μA
mA
mA
Switching times
t
s
t
f
Storage time
V
CC
=200V;I
C
=7A;
I
B1
=1.4A; I
B2
=-2.8A
Fall time
0.1
0.2
3.0
μs
μs
2