Product Specification
www.jmnic.com
Silicon NPN Power Transistor
2SC3835
DESCRIPTION
・Low
Collector Saturation Voltage
: V
CE(sat)
= 0.5V(Max)@ I
C
=3A
・Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 120V (Min)
・Good
Linearity of h
FE
APPLICATIONS
・Designed
for use in humidifier , DC/DC converter and
general purpose applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
200
V
V
CEO
Collector-Emitter Voltage
120
V
V
EBO
Emitter-Base Voltage
8
V
I
C
I
CM
Collector Current-Continuous
7
A
Collector Current-Pulse
14
A
I
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
3
A
P
C
70
W
℃
℃
T
J
150
T
stg
Storage Temperature Range
-55~150
1
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
