Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220Fa package
・Satisfactory
linearity of foward current transfer ratio h
FE
・
Wide area of safe operation (ASO)
・High-speed
switching
・High
collector to base voltage V
CBO
APPLICATIONS
2SC4004
・For
high breakdown voltage high-speed switching
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
ABSOLUTE MAXIMUM RATINGS AT Tc=25
℃
SYMBOL
V
CBO
V
CEO
Collector-emitter voltage
V
CES
V
EBO
I
C
I
CM
I
B
P
C
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
T
C
=25℃
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
W
℃
℃
Open collector
Open base
800
7
1
2
0.3
30
V
V
A
A
A
W
PARAMETER
Collector-base voltage
CONDITIONS
Open emitter
VALUE
900
900
UNIT
V
V
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
