JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=0.1A ; I
B
=0
I
C
=2.5A; I
B
=0.5A
I
C
=2.5A; I
B
=0.5A
At rated voltage
At rated voltage
At rated voltage
I
C
=2.5A ; V
CE
=5V
I
C
=1mA ; V
CE
=5V
I
C
=0.5A ; V
CE
=10V
10
5
20
MIN
450
TYP.
2SC4053
MAX
UNIT
V
1.0
1.5
0.1
0.1
0.1
V
V
mA
mA
mA
MHz
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=2.5A;I
B1
=0.5A;
I
B2
=1A;R
L
=60Ω
V
BB2
=4V
0.5
2.0
0.2
μs
μs
μs
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
