JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=10mA ,I
B
=0
I
C
=1mA ,I
E
=0
I
C
=5A; I
B
=1A
I
C
=5A; I
B
=1A
V
CB
=500V; I
E
=0
V
EB
=8V; I
C
=0
I
C
=5A ; V
CE
=5V
15
MIN
450
600
TYP.
2SC4157
MAX
UNIT
V
V
1.0
2.0
100
1.0
V
V
μA
mA
Switching times
t
r
t
stg
t
f
Rise time
Storage time
Fall time
V
CC
≈200V
I
B1
=-I
B2
=0.5A ; R
L
=40Ω
0.5
2.5
0.5
μs
μs
μs
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
