JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SC4508
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustainig voltage
I
C
=100mA ; I
B
=0
400
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=1mA ; I
E
=0
500
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=1mA ; I
C
=0
7
V
V
CEsat
Collector-emitter saturation voltage
I
C
=4A ;I
B
=0.8A
0.8
V
V
BEsat
Base-emitter saturation voltage
I
C
=4A ;I
B
=0.8A
1.2
V
I
CBO
Collector cut-off current
V
CB
=450V; I
E
=0
100
μA
I
EBO
Emitter cut-off current
V
EB
=7V; I
C
=0
100
μA
h
FE-1
DC current gain
I
C
=1A ; V
CE
=5V
25
65
h
FE-2
DC current gain
I
C
=4A ; V
CE
=5V
20
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
