Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3P(H)IS package
・High
speed
・High
voltage
・Low
saturation voltage
・Collector
metal (fin) is fully covered
with mold resin
APPLICATIONS
・Horizontal
deflection output for high
resolution display,colorTV
・High
speed switching applications
PINNING
2SC5048
PIN
1
2
3
Base
DESCRIPTION
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
600
5
12
24
6
50
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
