Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1276 2SD1276A
DESCRIPTION
・With
TO-220Fa package
・Complement
to type 2SB950
and 2SB950A
・High
forward current transfer ratio h
FE
・High-speed
switching
APPLICATIONS
・For
power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
ABSOLUTE MAXIMUM RATINGS AT Tc=25
℃
SYMBOL
V
CBO
PARAMETER
2SD1276
Collector-base voltage
2SD1276A
2SD1276
V
CEO
Collector-emitter voltage
2SD1276A
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current (DC)
Collector current-Peak
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
℃
℃
Open collector
Open base
80
5
4
8
40
W
V
A
A
Open emitter
80
60
V
CONDITIONS
VALUE
60
V
UNIT
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
