Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1296
DESCRIPTION
・With
TO-3PN package
・High
DC current gain
・Low
saturation voltage
APPLICATIONS
・For
audio frequency power amplifier
and low speed high current switching
industrial use
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25℃
P
T
Total power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
3.0
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
MAX
150
100
8
15
30
100
W
UNIT
V
V
V
A
A
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