Product Specification
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Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
EBO
V
CEsat
V
BEsat
PARAMETER
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
CONDITIONS
I
E
=500mA; I
C
=0
I
C
=3A; I
B
=1A
I
C
=3A; I
B
=1A
V
CB
=750V; I
E
=0
I
CBO
Collector cut-off current
V
CB
=1500V; I
E
=0
h
FE
t
s
t
f
V
F
DC current gain
Storage time
Fall time
Diode forward voltage
I
C
=3A ; V
CE
=10V
5
4
MIN
5
TYP.
2SD1441
MAX
UNIT
V
1.0
1.5
50
1
15
9
0.8
2.2
V
V
μA
mA
I
C
=3A
I
Bend
=1A,L
Leak
=5μH
μs
μs
V
I
F
=-4A,I
B
=0
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