Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1409
DESCRIPTION
・With
TO-220F package
・High
DC current gain
・Monolithic
construction with built-in base-emitter
shunt resistor
APPLICATIONS
・Igniter
applications
・High
volitage switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Base current
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2.0
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
600
400
5
6
1
25
W
UNIT
V
V
V
A
A
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
