Product Specification
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Silicon NPN Power Transistors
2SD1788
DESCRIPTION
・With
ITO-220 package
・Switching
power transistor
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (ITO-220) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
T
T
j
T
stg
V
dis
TOR
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
Dielectric strength
Mounting torque
Terminals to case,AC1 minute
(Recommended torque:0.3N·m)
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
100
100
7
±4
±6
0.3
0.5
25
150
-55~150
2
0.5
UNIT
V
V
V
A
A
A
A
W
℃
℃
kV
N·m
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
5.0
UNIT
℃/W
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
