Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD2061
DESCRIPTION
・With
TO-220Fa package
・Low
saturation voltage
・Excellent
DC current gain characteristics
・Wide
safe operating area
APPLICATIONS
・For
low frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
emitter
Fig.1 simplified outline (TO-220Fa) and symbol
・
ABSOLUTE MAXIMUM RATINGS AT Tc=25
℃
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
T
a
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
80
60
5
3
6
30
2
150
-55~150
UNIT
V
V
V
A
A
W
W
℃
℃
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
