Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD2089
DESCRIPTION
・With
TO-3P(H)IS package
・Built-in
damper diode
・High
voltage ,high speed
・Low
collector saturation voltage
APPLICATIONS
・Small
screen color TV horizontal
output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
・
ABSOLUTE MAXIMUM RATINGS AT Ta=25
℃
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Ta=25℃
P
C
Collector power dissipation
Tc=25℃
T
j
T
stg
Junction temperature
Storage temperature
40
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
600
5
3.5
1
3.5
W
V
A
A
UNIT
V
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
