Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD2060
DESCRIPTION
・With
TO-220F package
・Complement
to type 2SB1368
・Low
collector saturation voltage:
V
CE(SAT)
=1.7V(Max) at I
C
=3A,I
B
=0.3A
・Collector
power dissipation:
P
C
=25W(T
C
=25
℃
)
APPLICATIONS
・With
general purpose applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
T
a
=25℃
P
C
Collector dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
25
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
80
80
5
4
0.4
2.0
W
UNIT
V
V
V
A
A
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
