Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220F package
・DARLINGTON
APPLICATIONS
・
Low frequency power amplifier
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
2SD2101
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Collector current peak
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
W
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
200
200
7
10
15
30
UNIT
V
V
V
A
A
W
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