Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3PL package
・Complement
to type 2SB1470
・High
forward current transfer ratio h
FE
・Low
saturation voltage V
CE(sat)
・DARLINGTON
APPLICATIONS
・For
power amplification
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SD2222
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
3.5
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
160
160
5
8
15
120
W
UNIT
V
V
V
A
A
JMnic