Product Specification
www.jmnic.com
Silicon NPN Darlington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=50mA; I
B
=0
I
C
=7 A;I
B
=7m A
I
C
=7 A;I
B
=7m A
V
CB
=160V I
E
=0
V
EB
=5V; I
C
=0
I
C
=7A ; V
CE
=4V
I
C
=2A ; V
CE
=12V
I
E
=0; V
CB
=10V;f=1MHz
5000
55
95
MIN
150
2SD2439
TYP.
MAX
UNIT
V
2.5
3.0
100
100
V
V
μA
μA
MHz
pF
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=7A;R
L
=10Ω
I
B1
=-I
B2
=7mA
V
CC
=70V
0.5
10.0
1.1
μs
μs
μs
h
FE
classifications
O
5000-12000
P
6500-20000
Y
15000-30000
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
