Product Specification
www.jmnic.com
Silicon Power Transistors
BUL52B
DESCRIPTION
・With
TO-220C package
・High
voltage
・Fast
switching
・High
energy rating
APPLICATIONS
・Designed
for use in
electronic ballast applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
emitter
DESCRIPTION
・
LIMITING VALUES
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Total power dissipation
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
800
400
10
8
12
4
100
-55~150
UNIT
V
V
V
A
A
A
W
℃
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
