Product Specification
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Silicon Power Transistors
BUW24
DESCRIPTION
・Short
switching time
・High
dielectric strength
・With
TO-3 package
APPLICATIONS
・Suitable
for use in clocked
voltatge converters
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
MAXIMUN RATINGS
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
mb
≤25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
450
350
7
10
3
100
150
-65~150
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
VALUE
1.25
UNIT
K/W
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