Product Specification
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Silicon NPN Power Transistors
BUW35
DESCRIPTION
・
・With
TO-3 package
・High
breakdown voltage
APPLICATIONS
・For
high voltage ,fast switching
applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
≤25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
800
400
7
10
15
5
125
200
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
VALUE
1.4
UNIT
℃/W
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