Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220F package
・High
voltage ,high speed
・Improved
efficiency due to low base
rive requirements:
-High and flat DC current gain h
FE
-Fast switching
APPLICATIONS
・Designed
for use in 220V line-operated
switchmode power supplies and electronic
light ballasts.
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
MJF18008
・
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1000
450
9
8
16
4
8
45
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
R
th j-A
PARAMETER
Thermal resistance junction to case
Thermal resistance junction to ambient
VALUE
2.78
62.5
UNIT
℃/W
℃/W
JMnic