R
JCS12N65T
t
d
(on)
t
r
t
d
(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=480V ,
I
D
=12A
V
GS
=10V
（note
4，5）
V
DD
=300V,I
D
=12A,R
G
=25Ω
（note
4，5）
-
-
-
-
-
-
-
78 102
133 175
233 305
104 160
39
8.5
20
52
-
-
ns
ns
ns
ns
nC
nC
nC
电特性
ELECTRICAL CHARACTERISTICS
开关特性
Switching Characteristics
延迟时间
Turn-On delay time
上升时间
Turn-On rise time
延迟时间
Turn-Off delay time
下降时间
Turn-Off Fall time
栅极电荷总量
Total Gate Charge
栅－源电荷
Gate-Source charge
栅－漏电荷
Gate-Drain charge
漏－源二极管特性及最大额定值
Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
正向压降
Drain-Source Diode Forward
Voltage
反向恢复时间
Reverse recovery time
反向恢复电荷
Reverse recovery charge
V
SD
I
S
-
-
12
A
I
SM
-
-
48
A
V
GS
=0V,
I
S
=12A
-
-
1.39
V
t
rr
Q
rr
V
GS
=0V, I
S
=12A
(note 4)
dI
F
/dt=100A/
μ
s
-
-
418
4.85
-
-
ns
μC
热特性
THERMAL CHARACTERISTIC
项
目
符
号
JCS12N65CT
0.5
62.5
Notes:
1：Pulse width limited by maximum junction
temperature
2：L=11.2mH, I
AS
=12A, V
DD
=50V, R
G
=25
Ω,Starting
T
J
=25℃
3：I
SD
≤12A,di/dt ≤300A/μs,VDD≤BV
DSS
, Starting
T
J
=25℃
4：Pulse Test：Pulse Width
≤300μs,Duty
Cycle≤2％
5：Essentially independent of operating temperature
最大
Max
JCS12N65FT
2.45
62.5
单
�½�
Parameter
结到管壳的热阻
Thermal Resistance, Junction to Case
结到环境的热阻
Thermal Resistance, Junction to Ambient
注释：
1
脉冲�½度由最高结温限制
2：
L=11.2mH, I
AS
=12A, V
DD
=50V, R
G
=25
Ω,起始结
温
T
J
=25℃
3：I
SD
≤12A,di/dt ≤300A/μs,VDD≤BV
DSS
,起始结温
T
J
=25℃
4：脉冲测试：脉冲�½度≤300μs,占空比≤2％
5：基本与工�½�温度无关
Symbol
R
th(j-c)
R
th(j-A)
Unit
℃/W
℃/W
版本：201010C
4/10
JSMC [ JILIN SINO-MICROELECTRONICS CO., LTD. ]
