R
JCS740
ELECTRICAL CHARACTERISTICS (curves)
Transfer Characteristics
10
特征曲线
On-Region Characteristics
V
GS
15V
10V
8V
7V
6.5V
6V
5.5V
Bottom 5V
Top
I
D
[A]
10
I
D
[A]
25
℃
150
℃
1
Notes
：
1. 250μs pulse test
2. T
C
=25
℃
1
0.1
Notes
：
1.250μs pulse test
2.V
DS
=40V
2
4
6
8
10
1
10
V
DS
[V]
V
GS
[V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
1.05
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
10
R
DS
( on ) [
Ω
]
1.00
V
GS
=10V
0.95
25
℃
I
DR
[A]
0.90
V
GS
=20V
1
0.85
150
℃
T
Note
：
j
=25
℃
0.1
0.4
0.6
0.8
1.0
1.2
0.80
Notes
：
1. 250μs pulse test
2. V
GS
=0V
8
1.4
1.6
0.75
0
1
2
3
4
5
6
7
I
D
[A]
V
SD
[V]
Capacitance Characteristics
C
iss
=C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
12
Gate Charge Characteristics
3x10
3
10
V
DS
=320V
V
DS
=200V
V
GS
Gate Source Voltage[V]
Capacitance [pF]
8
2x10
3
V
DS
=80V
6
1x10
3
4
2
0
10
-1
V
DS
Drain-Source Voltage [V]
10
0
10
1
0
0
4
8
12
16
20
24
28
32
Q
g
Toltal Gate Charge [nC]
版本：201008B
5/12
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