R
JCS7N65F
ELECTRICAL CHARACTERISTICS (curves)
Transfer Characteristics
10
特征曲线
On-Region Characteristics
V
GS
15V
10V
8V
7V
6.5V
6V
5.5V
Bottom 5V
Top
10
25
℃
I
D
[A]
I
D
[A]
150
℃
1
1
Notes
：
1. 250μs pulse test
2. T
C
=25
℃
0.1
Notes
：
1.250μs pulse test
2.V
DS
=40V
2
4
6
8
10
1
10
V
DS
[V]
V
GS
[V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
1.40
1.35
1.30
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
10
R
DS
(on) [
Ω
]
1.25
1.20
1.15
1.10
1.05
1.00
0.95
V
GS
=10V
I
DR
[A]
25
℃
1
V
GS
=20V
150
℃
Note
：
T
j
=25
℃
0.1
Notes
：
1. 250μs pulse test
2. V
GS
=0V
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
0
2
4
6
8
10
0.4
0.5
0.6
0.7
I
D
[A]
V
SD
[V]
Capacitance Characteristics
12
Gate Charge Characteristics
10
V
DS
=480V
V
DS
=300V
V
GS
Gate Source Voltage[V]
8
V
DS
=120V
6
4
2
0
0
10
20
30
40
50
60
Q
g
Toltal Gate Charge [nC]
版本：201004A
5/8
JSMC [ JILIN SINO-MICROELECTRONICS CO., LTD. ]
