SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
L
2N3906S
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
L
FEATURES
Low Leakage Current
A
@V
CE
=-30V, V
EB
=-3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: V
CE(sat)
=-0.4V(Max.) @I
C
=-50mA, I
B
=-5mA.
G
: I
CEX
=-50nA(Max.), I
BL
=-50nA(Max.)
2
3
1
P
P
C
Complementary to 2N3904S.
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
RATING
-40
-40
-5
-200
-50
350
150
-55 150
0.6 )
UNIT
V
V
V
mA
mA
mW
Type Name
K
: C
ob
=4.5pF(Max.) @V
CB
=-5V.
M
SOT-23
Marking
J
Low Collector Output Capacitance
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
N
H
D
Lot No.
ZA
Note : * Package Mounted On 99.5% Alumina 10 8
2005. 4. 21
Revision No : 3
1/4
KEC [ KEC(KOREA ELECTRONICS) ]
