SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
High density cell design for low R
DS(ON)
.
Voltage controolled small signal switch.
Rugged and reliable.
High saturation current capablity.
2N7002A
N CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Drain-Source Voltage
Drain-Gate Voltage (R
GS
Gate-Source Voltage
1
)
)
SYMBOL
V
DSS
V
DGR
V
GSS
RATING
60
60
20
115
mA
800
200
150
-55 150
mW
UNIT
V
V
V
Continuous
Drain Current
Pulsed
Drain Power Dissipation
Junction Temperature
Storage Temperature Range
I
D
I
DP
P
D
T
j
T
stg
EQUIVALENT CIRCUIT
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
SYMBOL
BV
DSS
I
DSS
I
GSSF
I
GSSR
TEST CONDITION
V
GS
=0V, I
D
=10 A
V
DS
=60V, V
GS
=0V
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
MIN.
60
-
-
-
TYP.
-
-
-
-
MAX.
-
1
1
-1
UNIT
V
A
A
A
2008. 4. 4
Revision No : 5
1/4
KEC [ KEC(KOREA ELECTRONICS) ]
