SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
ESD Protected 2000V.
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
A
G
L
2N7002K
N Channel MOSFET
ESD Protected 2000V
E
B
L
DIM
A
D
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93+ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
Rugged and reliable.
High saturation current capablity.
2
3
H
1
P
P
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Continuous
Drain Current
Pulsed
(Note 1)
SYMBOL
V
DSS
V
GSS
I
D
I
DP
P
D
T
j
T
stg
1%
RATING
60
20
300
UNIT
V
M
1. SOURCE
V
mA
2. GATE
3. DRAIN
1200
300
150
-55 150
mW
Drain Power Dissipation
(Note 2)
Junction Temperature
Storage Temperature Range
Note 1) Pulse Width 10
, Duty Cycle
K
SOT-23
Note 2) Package mounted on a glass epoxy PCB(100mm
2
1mm)
EQUIVALENT CIRCUIT
D
Marking
Lot No.
G
Type Name
WC
S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
SYMBOL
BV
DSS
I
DSS
I
GSSF
I
GSSR
TEST CONDITION
V
GS
=0V, I
D
=10 A
V
DS
=60V, V
GS
=0V
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
MIN.
60
-
-
-
TYP.
-
-
-
-
MAX.
-
1
10
-10
UNIT
V
A
A
A
2009. 11. 17
Revision No : 2
J
MAXIMUM RATING (Ta=25
)
C
N
1/4
KEC [ KEC(KOREA ELECTRONICS) ]
