SEMICONDUCTOR
TECHNICAL DATA
High Voltage Switching.
FEATURES
・High
Reliability.
・Small
surface mounting type (SOT-23).
2
L
E
B
BAS21
SILICON EPITAXIAL PLANAR DIODE
L
DIM
A
D
B
C
D
E
G
H
J
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
3
A
G
H
1
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Continuous Forward Current
Surge Current (10mS)
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
RM
V
R
I
F
I
FSM
P
D
T
j
T
stg
RATING
300
250
250
2
250*
mW
300**
150
-55�½�150
℃
℃
UNIT
V
C
N
P
P
K
L
M
N
P
V
mA
A
1. NC
2. ANODE
3. CATHODE
M
K
J
3
2
1
SOT-23
* Note1 : Package Mounted On FR-5 Board (25.4×19.05×1.57mm)
** Note2 : Package Mounted On 99.5% Alumina (10×8×0.6mm)
Marking
Type Name
Lot No.
H9
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
SYMBOL
V
F
I
R(1)
I
R(2)
C
T
t
rr
TEST CONDITION
I
F
=150mA
V
R
=250V
V
R
=300V
V
R
=0V, f=1MHz
I
R
=30mA, I
F
=30mA
MIN.
-
-
-
-
-
TYP.
-
-
-
-
-
MAX.
1.25
0.2
100
3
100
UNIT
V
μ
A
pF
nS
2009. 1. 23
Revision No : 1
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
