SEMICONDUCTOR
TECHNICAL DATA
For high speed Switching.
BAT54S
SCHOTTKY BARRIER TYPE DIODE
FEATURES
・Low
Forward Voltage.
・Low
Leakage Current.
L
E
B
L
DIM
A
2
A
G
H
1
D
B
C
D
E
G
H
J
K
P
P
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
3
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Reverse Voltage
Average Forward Current
Non-repetitive Peak
Forward Surge Current (t<1.0s)
Repetitive Peak Forward Current
Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
R
I
O
I
FSM
I
FRM
P
D
T
j
T
stg
RATING
30
0.2
0.6
0.3
0.2
125
-55�½�150
UNIT
V
A
A
A
W
℃
℃
C
N
J
M
K
3
1. CATHODE 1
2. ANODE 2
3. ANODE 1/CATHODE 2
D2
2
D1
1
SOT-23
Marking
Lot No.
Type Name
L44
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
I
F
=1.0mA
Forward Voltage
V
F
I
F
=10mA
I
F
=30mA
I
F
=100mA
Reverse Current
Total Capacitance
Reverse Recovery Time
I
R
C
T
t
rr
V
R
=25V
V
R
=1V, f=1MHz
I
R
=I
F
=10mA
MIN.
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
MAX.
0.32
0.40
0.50
0.80
2
10
5
UNIT
V
V
V
V
μ
A
pF
ns
2009. 2. 4
Revision No : 0
1/1
KEC [ KEC(KOREA ELECTRONICS) ]
