SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
・
Small Package
・
Low Forward Voltage
・
Fast Reverse Recovery Time
・
Small Total Capacitance
BAV70T
SILICON EPITAXIAL PLANAR DIODE
: ESM.
: V
F
=0.9V (Typ.).
: t
rr
=1.6ns(Typ.).
A
G
H
2
1
E
B
D
3
DIM
A
B
C
D
E
G
H
J
: C
T
=0.9pF (Typ.).
MILLIMETERS
_
1.60 + 0.10
_
0.85 + 0.10
_
0.70 + 0.10
0.27+0.10/-0.05
_
1.60 + 0.10
_
1.00 + 0.10
0.50
_
0.13 + 0.05
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Continuous Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
RM
V
R
I
F
I
FSM
P
D
T
j
T
stg
RATING
85
80
150
2
200 *
150
-55�½�150
UNIT
V
1. ANODE 1
3
V
mA
A
mW
℃
℃
C
MAXIMUM RATING (Ta=25℃)
J
2. ANODE 2
3. CATHODE
2
1
ESM
Note : * Package Mounted On FR-5 Board (25.4×19.05×1.57mm)
Marking
H2
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
V
F(1)
Forward Voltage
V
F(2)
V
F(3)
Reverse Current
Total Capacitance
Reverse Recovery Time
I
R
C
T
t
rr
TEST CONDITION
I
F
=1mA
I
F
=10mA
I
F
=150mA
V
R
=80V
V
R
=0, f=1MHz
I
F
=10mA
MIN.
-
-
-
-
-
-
TYP.
0.60
0.72
-
-
-
-
MAX.
-
-
1.25
0.5
3.0
4.0
μ
A
pF
nS
V
UNIT
2009. 1. 23
Revision No : 1
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
