SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Complementary to BC807.
2
A
G
H
1
L
E
B
BC817
EPITAXIAL PLANAR NPN TRANSISTOR
L
3
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
*
T
j
T
stg
RATING
50
45
5
800
-800
350
150
-55 150
0.6mm.
UNIT
V
C
N
P
P
V
V
mA
mA
mW
M
K
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
* : Package Mounted On 99.9% Alumina 10 8
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
(1) Classification
SYMBOL
I
CBO
I
EBO
h
FE
(1)
h
FE
(2)
V
CE(sat)
V
BE
f
T
C
ob
TEST CONDITION
V
CB
=20V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=500mA
I
C
=500mA, I
B
=50mA
V
CE
=1V, I
C
=500mA
V
CE
=5V, I
C
=10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
MIN.
-
-
100
40
-
-
100
-
TYP.
-
-
-
-
-
-
-
5
MAX.
0.1
0.1
630
-
0.7
1.2
-
-
V
V
MHz
pF
UNIT
A
A
16:100 250 , 25:160 400 , 40:250 630
Marking
J
D
MARK SPEC
TYPE
MARK
BC817-16
6A
BC817-25
6B
BC817-40
6C
Type Name
Lot No.
2009. 2. 19
Revision No : 5
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
