SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
L
BC846/7/8
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
L
FEATURES
High Voltage : BC846 V
CEO
=65V.
A
G
For Complementary With PNP Type BC856/857/858.
2
3
1
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
SYMBOL
RATING
80
V
CBO
50
30
65
V
CEO
45
30
6
V
EBO
6
5
I
C
I
E
P
C
*
T
j
T
stg
100
-100
350
150
Type Name
P
P
UNIT
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
C
N
H
BC846
Collector-Base Voltage
BC847
BC848
BC846
Collector-Emitter
Voltage
BC847
BC848
BC846
Emitter-Base Voltage
BC847
BC848
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
M
V
1. EMITTER
2. BASE
3. COLLECTOR
V
K
SOT-23
V
mA
mA
mW
Marking
Lot No.
-55 150
0.6mm.
P
C
* : Package Mounted On 99.5% Alumina 10 8
MARK SPEC
TYPE
MARK
BC846A
1A
BC846B
1B
BC847A
1E
BC847B
1F
BC847C
1G
BC848A
1J
BC848B
1K
BC848C
1L
2008. 8. 13
Revision No : 3
J
D
1/3
KEC [ KEC(KOREA ELECTRONICS) ]
