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BCW29 参数 Datasheet PDF下载

BCW29图片预览
型号: BCW29
PDF下载: 下载PDF文件 查看货源
内容描述: 外延平面PNP晶体管 [EPITAXIAL PLANAR PNP TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 1 页 / 33 K
品牌: KEC [ KEC(KOREA ELECTRONICS) ]
   
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Complementary to BCW31/32
2
L
BCW29/30
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
L
3
1
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
RATING
-30
-20
-5
-100
350
150
-65 150
0.6mm.
UNIT
P
P
V
C
N
V
V
mA
mW
M
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
A
G
H
1. EMITTER
2. BASE
3. COLLECTOR
K
* : Package Mounted On 99.9% Alumina 10 8
SOT-23
Marking
Lot No.
Lot No.
Type Name
C1
BCW29
Type Name
C2
BCW30
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
BCW29
DC Current Gain
BCW30
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Output Capacitance
Noise Figure
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(ON)
C
ob
NF
TEST CONDITION
I
C
=-10 A
I
C
=-2mA
I
E
=-10 A
V
CB
=-30V
V
EB
=-5V
V
CE
=-5V, I
C
=-2mA
I
C
=-10mA, I
B
=-0.5mA
V
CE
=-5V, I
C
=-2mA
V
CB
=-10V, I
E
=0, f=1MHz
V
CE
=-5V, I
C
=-0.2mA
R
S
=2k , f=1kHz
MIN.
-30
-20
-5
-
-
110
200
-
-0.55
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
-100
-100
220
450
-0.25
-0.7
4
10
V
V
pF
dB
UNIT
V
V
V
nA
nA
1999. 12. 29
Revision No : 1
J
D
1/1