SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
・Complementary
to BCW29/30.
2
L
BCW31/32
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
L
3
1
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
RATING
30
20
5
100
350
150
-55�½�150
UNIT
V
V
V
mA
mW
℃
℃
C
N
M
P
P
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
A
G
H
1. EMITTER
2. BASE
3. COLLECTOR
K
* : Package Mounted On 99.9% Alumina 10×8×0.6mm.
SOT-23
Marking
Lot No.
Type Name
Lot No.
D1
BCW31
Type Name
D2
BCW32
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
BCW31
BCW32
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(ON)
C
ob
NF
I
C
=10μ
A
I
C
=2mA
I
E
=10μ
A
V
CB
=30V
V
EB
=5V
V
CE
=5V, I
C
=2mA
I
C
=10mA, I
B
=0.5mA
V
CE
=5V, I
C
=2mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=5V, I
C
=0.2mA
R
S
=2kΩ, f=1kHz
TEST CONDITION
MIN.
30
20
5
-
-
110
200
-
0.55
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
100
100
220
450
0.25
0.7
4
10
V
V
pF
dB
UNIT
V
V
V
nA
nA
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Output Capacitance
Noise Figure
2002. 6. 18
Revision No : 2
J
D
1/1
KEC [ KEC(KOREA ELECTRONICS) ]
