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BD139 参数 Datasheet PDF下载

BD139图片预览
型号: BD139
PDF下载: 下载PDF文件 查看货源
内容描述: 外延平面NPN晶体管 [EPITAXIAL PLANAR NPN TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 34 K
品牌: KEC [ KEC(KOREA ELECTRONICS) ]
 浏览型号BD139的Datasheet PDF文件第2页  
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
High Current. (Max. : 1.5A)
・DC
Current Gain : h
FE
=40Min. @I
C
=0.15A
Complementary to BD140.
C
E
BD139
EPITAXIAL PLANAR NPN TRANSISTOR
A
B
D
F
G
H
J
K
L
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
Ta=25℃
Tc=25℃
T
j
T
stg
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
RATING
100
80
5
1.5
0.5
1.25
W
10
150
-55�½�150
UNIT
V
V
V
A
A
N
1
2
3
O
P
M
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
_
Φ3.2 +
0.1
3.5
_
11.0
+
0.3
2.9 MAX
1.0 MAX
1.9 MAX
_
0.75
+
0.15
_
15.5
+
0.5
_
2.3
+
0.1
_
0.65
+
0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
h
FE
(1)
DC Current Gain
h
FE
(2)
h
FE
(3)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
V
CE(sat)
V
BE
TEST CONDITION
V
CB
=30V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=30mA, I
B
=0
I
C
=5mA, V
CE
=2V
I
C
=150mA, V
CE
=2V
I
C
=500mA, V
CE
=2V
I
C
=500mA, I
B
=50mA
V
CE
=2V, I
C
=50mA
MIN.
-
-
80
25
40
25
-
-
TYP.
-
-
-
-
-
-
-
-
MAX.
0.1
10
-
-
250
-
0.5
1.0
V
V
UNIT
μ
A
μ
A
V
2008. 10. 10
Revision No : 1
1/2