SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
BFS20/BF599
EPITAXIAL PLANAR NPN TRANSISTOR
L
E
B
L
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
BFS20
Emitter-Base Voltage
BF599
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
G
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
RATING
40
25
4
UNIT
V
V
2
3
1
P
P
V
5
25
-25
200
150
-65 150
mA
mA
1. EMITTER
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
A
C
N
H
M
mW
2. BASE
3. COLLECTOR
K
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base
Breakdown Voltage
BFS20
BF599
BFS20
Collector Cut-off Current
BF599
DC Current Gain
BFS20
Base-Emitter Voltage
BF599
BFS20
Transition Frequency
BF599
Collector Output Capacitance
h
FE
V
BE(ON)
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
TEST CONDITION
I
C
=10 A, I
E
=0
I
C
=2mA, I
B
=0
I
E
=10 A, I
C
=0
V
CB
=20V, I
E
=0
I
CBO
V
CB
=20V, I
E
=0, Ta=150
V
CB
=40V, I
E
=0
V
CE
=10V, I
C
=7mA
V
CE
=10V, I
C
=7mA
MIN.
40
25
4
-
5
-
-
-
40
-
-
275
-
-
-
-
-
-
750
750
550
550
0.35
100
10
100
-
900
mV
-
-
MHz
-
-
pF
nA
A
nA
-
-
V
TYP.
-
-
MAX.
-
-
UNIT
V
V
f
T
C
ob
V
CE
=10V, I
C
=7mA, f=100MHz
V
CB
=10V, f=1MHz, I
E
=0
MARK SPEC
TYPE
BFS20
BF599
MARK
G1
G2
Marking
Type Name
Lot No.
Lot No.
G1
Type Name
G2
1999. 11. 30
Revision No : 2
J
D
1/1
KEC [ KEC(KOREA ELECTRONICS) ]
