SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
L
E
B
BSS63
EPITAXIAL PLANAR PNP TRANSISTOR
L
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
A
G
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
RATING
-110
-100
-6
-100
100
200
150
-65 150
UNIT
V
V
V
mA
mA
mW
2
3
1
P
P
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
C
N
H
M
1. EMITTER
2. BASE
3. COLLECTOR
K
SOT-23
Marking
J
D
Lot No.
Type Name
T6
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
BE(sat)
V
CE(sat)
f
T
C
ob
TEST CONDITION
I
C
=-10mA, I
B
=0
I
C
=-10 A, I
E
=0
I
E
=-10 A, I
C
=0
V
CB
=-90V, I
E
=0
V
CB
=-90V, I
E
=0, Ta=150
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-10mA
V
CE
=-1V, I
C
=-25mA
I
C
=-25mA, I
B
=-2.5mA
I
C
=-25mA, I
B
=-2.5mA
I
C
=-75mA, I
B
=-7.5mA
I
C
=-25mA, V
CE
=-5V, f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
MIN.
-100
-110
-6
-
-
-
30
30
-
-
-
50
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
3
MAX.
-
-
-
-100
-50
-200
-
-
-0.9
-0.25
-0.9
-
-
V
V
MHz
pF
UNIT
V
V
V
nA
A
nA
1998. 6. 15
Revision No : 1
1/1
KEC [ KEC(KOREA ELECTRONICS) ]
