SEMICONDUCTOR
TECHNICAL DATA
HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : V
F
=0.25(Typ.) @I
F
=5mA
Small Package : USM.
2
M
KDR331
SCHOTTKY BARRIER TYPE DIODE
E
B
M
D
3
DIM
A
B
C
D
E
G
H
1
MILLIMETERS
_
2.00 + 0.20
_
1.25 + 0.15
_
0.90 + 0.10
0.3+0.10/-0.05
_
2.10 + 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
_
0.42 + 0.10
0.10 MIN
A
J
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Operating Temperature Range
)
SYMBOL
V
RM
V
R
I
FM
I
O
I
FSM
P
D
T
j
T
stg
T
opr
RATING
15
10
100 *
50 *
1*
100
125
-55
-40
125
100
UNIT
V
V
mA
mA
A
mW
1. ANODE 1
2. ANODE 2
3. CATHODE
C
H
N
K
N
J
K
L
M
N
L
3
2
1
USM
* : Unit Rating. Total Rating=Unit Rating 1.5
Marking
Type Name
UW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
V
F(1)
Forward Voltage
V
F(2)
V
F(3)
Reverse Current
Total Capacitance
I
R
C
T
I
F
=1mA
I
F
=5mA
I
F
=50mA
V
R
=10V
V
R
=0V, f=1MHz
TEST CONDITION
MIN.
-
-
-
-
-
TYP.
0.21
0.25
0.35
-
13
MAX.
-
0.30
0.50
20
40
A
pF
V
UNIT
2001. 11. 29
Revision No : 1
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
