SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
・
Small Package
・
Low Forward Voltage
・
Fast Reverse Recovery Time
・
Small Total Capacitance
KDS120
SILICON EPITAXIAL TYPE DIODE
E
: USM.
: V
F
=0.92V (Typ.).
A
M
B
M
D
3
DIM
A
B
C
D
E
G
H
J
K
: t
rr
=1.6ns(Typ.).
: C
T
=2.2pF (Typ.).
2
1
MILLIMETERS
_
2.00 + 0.20
_
1.25 + 0.15
_
0.90 + 0.10
0.3+0.10/-0.05
_
2.10 + 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
_
0.42 + 0.10
0.10 MIN
J
G
C
L
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
RM
V
R
I
FM
I
O
I
FSM
P
D
T
j
T
stg
RATING
85
80
300 *
100 *
2*
100
150
-55�½�150
UNIT
V
V
mA
mA
A
mW
℃
℃
H
N
K
N
L
M
N
3
1. CATHODE 1
2. CATHODE 2
3. ANODE
2
1
USM
Note : * Unit Rating. Total Rating=Unit Rating x 1.5
Marking
Lot No.
Type Name
A3
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
V
F(1)
Forward Voltage
V
F(2)
V
F(3)
Reverse Current
Total Capacitance
Reverse Recovery Time
I
R
C
T
t
rr
TEST CONDITION
I
F
=1mA
I
F
=10mA
I
F
=100mA
V
R
=80V
V
R
=0, f=1MHz
I
F
=10mA
MIN.
-
-
-
-
-
-
TYP.
0.61
0.74
0.92
-
2.2
1.6
MAX.
-
-
1.20
0.5
4.0
4.0
μ
A
pF
nS
V
UNIT
2008.9. 8
Revision No : 4
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
