SEMICONDUCTOR
TECHNICAL DATA
TV TUNING.
FEATURES
・Low
Series Resistance : r
S
=0.4Ω(Typ.)
・Excellent
C-V Characteristics, and Small Tracking Error.
・Useful
for Small Size Tuner.
KDV214E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
・High
Capacitance Ratio : C2V/C25V=6.5(Typ.)
C
1
E
2
D
F
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
SYMBOL
V
R
V
RM
T
j
T
stg
RATING
30
35 (R
L
=10kΩ)
125
-55�½�125
UNIT
V
V
℃
℃
1. ANODE
2. CATHODE
B
A
DIM
A
B
C
D
E
F
MILLIMETERS
_
1.60 + 0.10
_ 0.10
1.20 +
_
0.80 + 0.10
_ 0.05
0.30 +
_
0.60 + 0.10
_
+ 0.05
0.13
ESC
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Reverse Voltage
Reverse Current
Capacitance
Capacitance
Capacitance Ratio
Series Resistance
C(Max.)-C(Min.)
C(Min.)
(V
R
=2~25V)
SYMBOL
V
R
I
R
C
2V
C
25V
C
2V
/C
25V
r
S
V
R
=5V, f=470MHz
I
R
=1μ
A
V
R
=28V
V
R
=2V, f=1MHz
V
R
=25V, f=1MHz
TEST CONDITION
MIN.
30
-
14.16
2.11
5.90
-
TYP.
-
-
-
-
6.50
0.4
MAX.
-
10
16.25
2.43
7.15
0.55
UNIT
V
nA
pF
pF
-
Ω
Note : Available in matched group for capacitance to 2.5%.
≦0.025
Marking
Type Name
UO
2002. 6. 14
Revision No : 2
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
