SEMICONDUCTOR
TECHNICAL DATA
General Description
KHB4D5N60P/F/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB4D5N60P
A
O
C
F
E
G
B
Q
I
K
M
L
J
D
N
N
H
P
DIM MILLIMETERS
_
9.9 + 0.2
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
1
2
3
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switching mode
power supplies.
FEATURES
V
DSS(Min.)
= 600V, I
D
= 4.5A
Drain-Source ON Resistance :
R
DS(ON)
=2.5
@V
GS
=10V
Qg(typ.) =17nC
15.95 MAX
1.3+0.1/-0.05
_
0.8 + 0.1
_
3.6 + 0.2
_
2.8 + 0.1
3.7
0.5+0.1/-0.05
1.5
_
13.08 + 0.3
1.46
_
1.4 + 0.1
_
1.27 + 0.1
_
2.54 + 0.2
_
4.5 + 0.2
_
2.4 + 0.2
_
9.2 + 0.2
1. GATE
2. DRAIN
3. SOURCE
P
Q
MAXIMUM RATING (Tc=25
)
RATING
TO-220AB
CHARACTERISTIC
SYMBOL
KHB4D5N60P
KHB4D5N60F UNIT
KHB4D5N60F2
V
V
4.5*
2.8*
18*
A
K
L
E
KHB4D5N60F
A
F
C
Drain-Source Voltage
Gate-Source Voltage
@T
C
=25
Drain Current
@T
C
=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
V
DSS
V
GSS
I
D
I
DP
E
AS
E
AR
dv/dt
P
D
T
j
T
stg
106
0.85
4.5
2.8
18
600
30
O
DIM
B
MILLIMETERS
M
J
260
10.6
4.5
36
0.29
150
-55 150
mJ
D
R
mJ
V/ns
Q
1
N
N
H
2
3
A
B
C
D
E
F
G
H
J
K
L
M
N
O
Q
R
_
10.16
+
0.2
_
15.87
+
0.2
_
2.54
+
0.2
_
0.8
+
0.1
_
3.18
+
0.1
_
3.3
+
0.1
_
12.57
+
0.2
_
0.5
+
0.1
13.0 MAX
_
3.23
+
0.1
1.47 MAX
1.47 MAX
_
2.54
+
0.2
_
6.68
+
0.2
_
4.7
+
0.2
_
2.76
+
0.2
W
W/
G
1. GATE
2. DRAIN
3. SOURCE
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-
Ambient
TO-220IS (1)
KHB4D5N60F2
R
thJC
R
thCS
R
thJA
A
1.18
0.5
62.5
3.47
-
62.5
/W
S
C
F
/W
/W
P
E
G
B
DIM
MILLIMETERS
* : Drain current limited by maximum junction temperature.
K
L
L
R
J
PIN CONNECTION
D
M
D
D
N
N
H
G
1
2
3
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
_
10.0
+
0.3
_
15.0
+
0.3
_
2.70
+
0.3
0.76+0.09/-0.05
_
Φ3.2
+
0.2
_
3.0
+
0.3
_
12.0
+
0.3
0.5+0.1/-0.05
_
13.6
+
0.5
_
3.7
+
0.2
1.2+0.25/-0.1
1.5+0.25/-0.1
_
2.54
+
0.1
_
6.8
+
0.1
_
4.5
+
0.2
_
2.6
+
0.2
0.5 Typ
Q
1. GATE
2. DRAIN
3. SOURCE
S
TO-220IS
2007. 5. 10
Revision No : 0
1/7
KEC [ KEC(KOREA ELECTRONICS) ]
